Corrigendum: Lattice Distortion in In3SbTe2 Phase Change Material with Substitutional Bi
نویسندگان
چکیده
“This work is supported by Samsung Electronics, and the Ministry of Trade, Industry and Energy under the contract for the MLC-PRAM project [10039200, Development of High Performance Phase Change Materials], the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Korean government (MSIP) (Grant No. 2011-0028570), and KIST internal projects (Grant No. 2E25372 & 2E373)”.
منابع مشابه
Lattice Distortion in In3SbTe2 Phase Change Material with Substitutional Bi
Sb atoms in In3SbTe2 (IST) are partially substituted by 3.2-5.5 at.% of Bi atoms. As a result, the NaCl crystal structure of IST is slightly distorted. The distorted inter-planar angles observed with fast Fourier transformation of the lattice images are within the maximum range of interplanar angles calculated by density functional theory. When the Bi content is increased, the crystallization t...
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